US 12,002,783 B2 · Methods of manufacturing semiconductor device with bump interconnection

Abstract

Provided is a method of manufacturing a semiconductor device including a bump interconnect structure. In the method of manufacturing the semiconductor device, a first substrate including a connection pad is formed, and a bump including a solder layer and a metal post protruding from the solder layer are formed on the connection pad. A second substrate including a bump land may be formed. The first substrate may be disposed on the second substrate so that a protruding end of the metal post contacts the bump land, and the solder layer may be reflowed. Accordingly, it possible to interconnect the metal post to the bump land.

Claims20

Dependent claims

A method of manufacturing a semiconductor device, the method comprising:

forming a substrate including a connection pad;
forming a first resist pattern on the connection pad of the substrate, the first resist pattern including a ring-shaped first opening;
forming a ring pattern of a solder layer with an inserting hole by filling the ring-shaped first opening with a solder material;
selectively removing a portion of the first resist pattern that fills the inserting hole;
forming a second resist pattern with a second opening that substantially overlaps with the inserting hole;
and
filling the second opening with a metal material to form a metal post, the metal post with an inserting portion that is inserted into the inserting hole and a protruding portion that protrudes outside of the ring pattern of the solder layer.

4 more elements

Dependencies are inferred from the claim text.

Methods of manufacturing semiconductor device with bump interconnection

Life of this patent

Methods of manufacturing semiconductor device with bump interconnection

Life of this patent

Abstract

Claims20