Semiconductor device and method for manufacturing same

A method for manufacturing a semiconductor device, the method comprising:

• preparing a first substrate having a first face and a second face disposed, the first face having a plurality of product regions defined thereon;
• attaching directly or indirectly an electrode pad forming side of each of a first semiconductor chip stack and a second semiconductor chip stack to each corresponding product region of the plurality of product regions of the first face of the first substrate;
• thinning the second face of the first substrate opposite the first face of the first substrate;
• forming a first inorganic insulating layer on the second face of the first substrate;
• forming a first vertical interconnection penetrating through the first inorganic insulating layer and the first substrate and directly and electrically connected to an electrode pad of the first semiconductor chip stack while forming a second vertical interconnection penetrating through the first inorganic insulating layer and the first substrate and directly and electrically connected to an electrode pad of the second semiconductor chip stack;
• and
• forming a first horizontal interconnection directly and electrically connecting a part of the first vertical interconnection to a part of the second vertical interconnection on a face of the inorganic insulating layer opposite the first substrate.

A semiconductor device comprising:

• a first substrate having a first face and a second face disposed, the first face having a plurality of product regions defined thereon;
• a semiconductor chip stack and a semiconductor chip each including an electrode pad forming side and attached directly or indirectly to the first face of the first substrate while facing the electrode pad forming side to the first substrate;
• a first inorganic insulating layer provided on the second face of the first substrate opposite the first face;
• a first vertical interconnection penetrating through the first inorganic insulating layer and the first substrate and directly and electrically connected to an electrode pad of the semiconductor chip stack;
• a second vertical interconnection penetrating through the first inorganic insulating layer and the first substrate and directly and electrically connected to an electrode pad of the semiconductor chip;
• and
• a first horizontal interconnection provided on a face of the inorganic insulating layer opposite the first substrate and directly and electrically connecting a part of the first vertical interconnection to a part of the second vertical interconnection.