Semiconductor packages and methods of forming the same

A semiconductor package, comprising:

• a first semiconductor device, having a front side and a backside opposite to the front side;
• a first encapsulant along sidewalls of the first semiconductor device;
• a backside redistribution layer over the first encapsulant and a backside of the first semiconductor device;
• a first bonding structure over the backside redistribution layer, wherein the backside redistribution layer and the first bonding structure extend laterally beyond an edge of the first semiconductor device;
• a second semiconductor device over the backside of the first semiconductor device and electrically connected to first semiconductor device, wherein the backside of the first semiconductor device is between the front side of the first semiconductor device and the second semiconductor device;
• a second bonding structure on the front side of the second semiconductor device and bonded to the first bonding structure, wherein an edge of the second bonding structure is aligned with an edge of the second semiconductor device;
• and
• a plurality of bumps, disposed at the front side of the first semiconductor device and physically contacting first device pads of the first semiconductor device, wherein a width of the first semiconductor device is less than a width of the second semiconductor device.

A semiconductor package, comprising:

• a first semiconductor device, having a front side and a backside opposite to the front side;
• a first encapsulant along sidewalls of the first semiconductor device;
• a first bonding structure over the first encapsulant and the first semiconductor device, wherein the first bonding structure extends laterally beyond an edge of the first semiconductor device;
• a die stack over the backside of the first semiconductor device and electrically connected to first semiconductor device, the die stack comprising a plurality of semiconductor dies stacked on each other;
• a second bonding structure on the front side of the die stack and bonded to the first bonding structure, wherein an edge of the second bonding structure is aligned with an edge of the die stack;
• and
• a plurality of bumps, disposed at the front side of the first semiconductor device and physically contacting first device pads of the first semiconductor device, wherein a width of the first semiconductor device is less than a width of the die stack.