Semiconductor device having a passivation layer and method of making
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Lung Shih, Chao-Keng Li, Alan Kuo, C. C. Chang, Yi-An Lin
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a conductive pad over an interconnect structure, wherein the conductive pad is electrically connected to an active device. The semiconductor device further includes a dielectric layer over the conductive pad, wherein the dielectric layer has a first conformity. The semiconductor device further includes a passivation layer over the dielectric layer, wherein the passivation layer has a second conformity different from the first conformity.
Claims20
A method of making a semiconductor device, the method comprising:
- depositing a dielectric layer over a conductive pad using a first deposition process;
- and
- depositing a first passivation layer directly over the dielectric layer using a high density plasma chemical vapor deposition (HDPCVD), wherein the first deposition process is different from HDPCVD.
A method of making a semiconductor device, the method comprising:
- depositing a dielectric layer over a conductive pad, wherein the dielectric layer has a first conformity;
- and
- depositing a first passivation layer directly over the dielectric layer, wherein the first passivation layer has a second conformity greater than the first conformity.
A method of making a semiconductor device, the method comprising:
- forming a plurality of conductive pads over a substrate;
- depositing a dielectric layer over each of the plurality of conductive pads, wherein the dielectric layer has a first conformity;
- and
- depositing a passivation layer over the dielectric layer, wherein the passivation layer has a second conformity, and the second conformity is different from the first conformity.
Dependencies are inferred from the claim text.