Semiconductor package and manufacturing method thereof

A semiconductor package, comprising:

• a sensor die having a first surface and a second surface opposite the first surface, wherein the sensor die has a sensing region at the first surface;
• an encapsulant at least laterally encapsulating the sensor die;
• conductive vias penetrating through the encapsulant;
• and
• a first redistribution structure disposed on the encapsulant and the first surface of the sensor die, and electrically connected with the sensor die and the conductive vias, wherein the first redistribution structure comprises:
• a first dielectric layer and a second dielectric layer disposed on the first dielectric layer, wherein the first dielectric layer and the second dielectric layer define an opening exposing the sensing region of the sensor die;
• and
• a ring structure sandwiched between the first dielectric layer and the second dielectric layer, extending through the first dielectric layer to be in contact with the first surface of the sensor die, and surrounding the opening, wherein the ring structure is electrically insulated from the sensor die.

A manufacturing process for a semiconductor package, comprising:

• providing a carrier;
• forming conductive vias on the carrier;
• placing a sensor die adjacent to the conductive vias, wherein the sensor die has a first surface and a second surface opposite the first surface, the sensor die has an input/output region and a sensing region at the first surface;
• encapsulating the sensor die and the conductive vias with an encapsulant to form a molded semiconductor device, wherein the conductive vias extend through the molded semiconductor device;
• and
• forming a first redistribution structure on the first surface of the sensor die, the conductive vias and the encapsulant, wherein the first redistribution structure covers the input/output region and exposes the sensing region, and wherein forming the first redistribution structure comprises:
• forming a conductive layer with a redistribution pattern electrically connected with the sensor die and the conductive vias, and a ring structure contacting the sensor die, surrounding the sensing region and separated from the redistribution pattern, wherein the ring structure is closer to the sensing region than the redistribution pattern, and the ring structure is electrically insulated from the sensor die.