Integrated circuit package and method

A device comprising:

• an integrated circuit die;
• an encapsulant at least partially encapsulating the integrated circuit die;
• and
• a redistribution structure on the encapsulant, the redistribution structure comprising:
• a metallization pattern electrically coupled to the integrated circuit die;
• a dielectric layer on the metallization pattern;
• and
• a first under-bump metallurgy (UBM) having a first via portion extending through the dielectric layer, a second via portion extending through the dielectric layer, and a bump portion on the dielectric layer, the first via portion and the second via portion contacting a same landing pad of the metallization pattern, the bump portion having a first shape in a top-down view, the first via portion and the second via portion each have a second shape in the top-down view, the second shape being different from the first shape, wherein the first via portion has a first width and a first thickness, the second via portion has a second width and a second thickness, the first width is different from the second width, a first ratio of the first thickness to the first width is from 1.33 to 1.66, and a second ratio of the second thickness to the second width is from 1.33 to 1.66.

A device comprising:

• an integrated circuit die;
• an encapsulant at least partially encapsulating the integrated circuit die;
• and
• a redistribution structure on the encapsulant, the redistribution structure comprising:
• a metallization pattern electrically coupled to the integrated circuit die;
• a dielectric layer on the metallization pattern, the dielectric layer having a first thickness;
• and
• a first under-bump metallurgy (UBM) having a first via portion extending through the dielectric layer, a second via portion extending through the dielectric layer, and a first bump portion on the dielectric layer, the first UBM being physically and electrically coupled to the metallization pattern, the first via portion having a first width, a ratio of the first thickness to the first width being from 1.33 to 1.66, the second via portion having a second width, a ratio of the first thickness to the second width being from 1.33 to 1.66.