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US 12,002,765 B2Granted
Marks for overlay measurement and overlay error correction
AssigneeNanya Technology Corporation
InventorShih-Yuan Ma
Life of this patent
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Abstract
A mark for overlay error measurement and overlay error measurement is provided. The mark includes a first pattern and a second pattern. The first pattern is disposed on a first surface of a substrate. The second pattern is disposed on a second surface of the substrate. The second surface of the substrate is opposite to the first surface of the substrate. The first pattern overlaps at least a portion of the second pattern, and the first pattern and the second pattern collaboratively define a first overlay error.
Claims17
A mark for overlay error correction, comprising:
- a first pattern disposed on a first surface of a substrate;
- a second pattern disposed on a second surface of the substrate, wherein the second surface of the substrate is opposite to the first surface of the substrate, and
- a dummy layer disposed on the first surface of the substrate, wherein the first pattern is defined by the dummy layer;
- wherein the first pattern overlaps at least a portion of the second pattern, wherein the first pattern and the second pattern collaboratively define a first overlay error.
1 more element
A mark for overlay error correction, comprising:
- a first overlay mark comprising a first pattern and a second pattern disposed on a first surface of a substrate, wherein the first overlay mark is utilized to generate a first overlay error;
- and
- a second overlay mark comprising a third pattern disposed on a second surface of the substrate and a fourth pattern disposed on the first surface of the substrate, wherein the first surface of the substrate is opposite to the second surface of the substrate,
- wherein the second overlay mark is utilized to generate a second overlay error, and the second overlay mark is utilized to correct the first overlay error.
1 more element
Dependencies are inferred from the claim text.