Backside metal-insulator-metal (MIM) capacitors extending through backside interlayer dielectric (BILD) layer or semiconductor layer and partly through dielectric layer

A semiconductor device comprising:

• a backside interlayer dielectric (BILD) layer or a semiconductor layer;
• a dielectric layer arranged above the BILD layer or the semiconductor layer;
• backside power rails in the dielectric layer;
• a backside metal-insulator-metal (MIM) trench capacitor extending through the BILD layer or the semiconductor layer and partly through the dielectric layer between the backside power rails, wherein the backside MIM trench capacitor comprises a first metal layer spaced apart from a second metal layer;
• a first contact that overlaps a first region of the backside MIM trench capacitor, wherein in the first region, the first metal layer contacts the first contact, and the second metal layer is recessed and an insulative material contacts the first contact;
• and
• a second contact that overlaps a second region of the backside MIM trench capacitor, wherein in the second region, the first metal layer is recessed and the insulative material contacts the second contact, and the second metal layer contacts the second contact.

A computer program product for fabricating a semiconductor device, the computer program product comprising:

• a computer-readable storage medium having computer-readable program code embodied therewith, the computer-readable program code executable by one or more computer processors to perform an operation comprising:
• forming backside power rails in a dielectric layer arranged above a backside interlayer dielectric (BILD) layer or a semiconductor layer;
• forming a trench that extends through the BILD layer or the semiconductor layer and partly through the dielectric layer between the backside power rails;
• depositing a plurality of layers to form a backside metal-insulator-metal (MIM) capacitor in the trench;
• forming a first contact to a first metal layer of the plurality of layers, wherein forming the first contact comprises:
• forming first recesses in a second metal layer of the plurality of layers;
• and
• filling the first recesses with an insulative material;
• and
• forming a second contact to the second metal layer, wherein forming the second contact comprises:
• forming second recesses in the first metal layer;
• and
• filling the second recesses with the insulative material.