Power module with metal substrate

A power semiconductor module, comprising:

• a substrate of planar sheet metal comprising a plurality of islands that are each defined by channels that extend between upper and lower surfaces of the substrate;
• a first semiconductor die mounted on a first one of the islands;
• a molded body of encapsulant that covers the metal substrate, fills the channels, and encapsulates the first semiconductor die;
• a hole in the molded body that extends to a recess in the upper surface of the substrate;
• and
• a press-fit connector arranged in the hole such an interior end of the press-fit connector is mechanically and electrically connected to the substrate,
• wherein the channels comprise a ring-shaped channel that surrounds each one of the islands and separates each one of the islands from a peripheral ring of the substrate.