Structure and method for enhancing robustness of ESD device

A device comprising:

• an emitter region;
• a collector region;
• and
• isolation structures surrounding the emitter region and the collector region in a planar view, the isolation structures comprising a first isolation region, the first isolation region having:
• a first portion proximate the emitter region;
• a second portion proximate the collector region;
• and
• a third portion between the first portion and the second portion, the third portion and the first portion separated by a first partition structure, the third portion and the second portion separated by a second partition structure, each of the first portion, the second portion, and the third portion disposed between the emitter region and the collector region in the planar view.

A device comprising:

• a first well region of a first dopant type;
• a first diffusion region of a second dopant type in the first well region, the second dopant type being different from the first dopant type;
• a second well region of the second dopant type;
• a second diffusion region of the second dopant type in the second well region;
• and
• isolation structures surrounding the first diffusion region and the second diffusion region in a planar view, the isolation structures comprising a first isolation region, the first isolation region having:
• a first portion in the first well region;
• a second portion in the second well region;
• and
• a third portion between the first portion and the second portion in the planar view, a portion of the first well region disposed between the third portion and the first portion of the first isolation region, a portion of the second well region disposed between the third portion and the second portion of the first isolation region.