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US 12,002,701 B2Granted
Electrostatic chuck assembly for plasma processing apparatus
AssigneesMattson Technology, Inc., Beijing E-Town Semiconductor Technology Co., Ltd.
InventorMaolin Long
Life of this patent
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Abstract
An electrostatic chuck including a workpiece support surface, clamping layer, heating layer, thermal control system, and sealing band is disclosed. The sealing band surrounds an outer perimeter of the electrostatic chuck including at least a portion of the workpiece surface. The sealing band has a width greater than about 3 millimeters (mm) up to about 10 mm. Plasma processing apparatuses and systems incorporating the electrostatic chuck are also provided.
Claims20
An electrostatic chuck, comprising:
- a workpiece support surface configured to support a workpiece during processing;
- one or more clamping electrodes defining a clamping layer;
- one or more heating electrodes defining a heating layer;
- a thermal control system;
- and
- a sealing band surrounding an outer perimeter of the electrostatic chuck including at least a portion of the workpiece support surface, the sealing band having a width greater than about 3 millimeters (mm) up to about 10 mm.
3 more elements
An electrostatic chuck, comprising:
- a workpiece support surface configured to support a workpiece during processing;
- a pixelated array of a plurality of micro-electrodes;
- at least one RF bias source coupled to each of the plurality of micro-electrodes;
- a clamping power source configured to provide clamping power to each of the plurality of micro-electrodes so that each of the plurality of micro-electrodes is configured to act as a clamping electrode for the workpiece;
- and
- a controller configured to control the at least one RF bias source to independently adjust one or more RF parameters of RF bias power to one of the plurality of micro-electrodes relative to at least one other of the plurality of micro-electrodes.
3 more elements
Dependencies are inferred from the claim text.