Semiconductor equipment regulation method and semiconductor device fabrication method

A semiconductor device fabrication method, comprising:

• providing a simulated wafer, a first film-stack structure comprising alternately stacked support layers and sacrificial layers being formed on a surface of the simulated wafer;
• placing the simulated wafer in an etching chamber, and conditioning a temperature in the etching chamber by using a temperature control device while the first film-stack structure is etched by using an etching gas;
• during an etching process, forming a first polymer layer on the surface of the simulated wafer;
• measuring a thickness of the first polymer layer and acquiring a thickness distribution map;
• comparing the acquired thickness distribution map with a target thickness distribution map;
• adjusting a temperature control effect through using the temperature control device on each region of the simulated wafer according to a result of the comparison, so as to adjust a thickness of the first polymer layer formed during next etching process;
• and
• placing a product wafer in the etching chamber after thickness uniformity of the first polymer layer in the entire product wafer reaches a target value, the product wafer comprising a second film-stack structure in which support layers and sacrificial layers are alternately stacked;
• etching the second film-stack structure by using the etching gas while the temperature control device conditions a temperature of the product wafer, so as to form a plurality of etch holes in the second film-stack structure;
• and forming a second polymer layer on a surface of each etch hole during the etching process.