Semiconductor device and method of manufacturing the same

A semiconductor device, comprising:

• a substrate;
• a first resin layer provided above a first surface of the substrate, the first resin layer including a plurality of types of resins having different molecular weights and a filler;
• a first semiconductor chip provided above the first resin layer and the first surface;
• and
• a second resin layer provided in at least a part of a first region between the substrate and the first resin layer, the second resin layer directly contacting the first resin layer, the second resin layer including:
• at least one type of resins among the plurality of types of resins having a molecular weight smaller than a molecular weight of other types of resins among the plurality of types of resins, and
• a filler having a lower concentration than the filler of the first resin layer,
• a third resin layer covering the first resin layer, the second resin layer and the substrate,
• wherein
• the third resin layer directly contacting the first surface of the substrate,
• the first semiconductor chip directly contacting the first resin layer,
• the substrate includes a recess, and the second resin layer is disposed in a second region between the recess and the first resin layer,
• the recess has a first metal film and a second metal film, and the first and second metals are physically separated in the recess,
• a first part of the first metal film and a first part of the second metal film directly contacting a bottom surface of the recess,
• a second part of the first metal film and a second part of the second metal film being embedded in a side wall of the recess.