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AssigneeTokyo Electron Limited
InventorsTakashi Yamauchi, Shinichiro Kawakami, Masashi Enomoto
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A technique for suppressing a metal component from remaining at a bottom of a mask pattern when the mask pattern is formed using a metal-containing resist film. A developable anti reflection film 103 is previously formed below a resist film 104. Further, after exposing and developing the wafer W, TMAH is supplied to the wafer W to remove a surface of the anti-reflection film 103 facing a bottom of the recess pattern 110 of the resist film 104. Therefore, the metal component 105 can be suppressed from remaining at the bottom of the recess pattern 110. Therefore, when the SiO2 film 102 is subsequently etched using the pattern of the resist film 104, the etching is not hindered, so that defects such as bridges can be suppressed.
A method of forming a mask pattern on a surface of a substrate using a metal-containing resist, the method comprising:
A method of forming a mask pattern on a surface of a substrate using a metal-containing resist, the method comprising:
A substrate processing apparatus, comprising:
A substrate processing apparatus, comprising:
A method of forming a mask pattern on a surface of a substrate using a metal-containing resist, the method comprising:
A substrate processing apparatus, comprising:
Dependencies are inferred from the claim text.