Cleaning method and plasma processing apparatus

A cleaning method comprising:

• performing a first cleaning process in which a first residue in a chamber is removed and a second residue in the chamber is halogenated with a plasma of a first gas comprising a halogen-containing compound, wherein the first residue comprises one or more elements from a group consisting of silicon, germanium, boron, phosphorus, arsenic, nitrogen, carbon, sulfur, selenium, and tellurium and the second residue comprises one or more elements from a group consisting of germanium, tin, lead, antimony, and bismuth;
• and
• after the first cleaning process, performing a second cleaning process in which the halogenated second residue is hydrogen-reduced by a plasma of a second gas comprising an H-containing compound to generate a hydride of the halogenated second residue and the hydride of the halogenated second residue is removed,
• wherein the first cleaning process and the second cleaning process are performed in that order X times, wherein X is a natural greater than or equal to 1, and
• wherein the first gas comprises a first composition, wherein the second gas comprises a second composition, and wherein the first composition is different than the second composition.