Back to results
US 12,002,533 B2Granted
System, method and/or apparatus for magnetic memory testing
AssigneeArm Limited
InventorsPranay Prabhat, Mudit Bhargava, Fernando Garcia Redondo
Life of this patent
Estimating the term…
Abstract
Briefly, embodiments, such as methods and/or systems for operations and/or procedures to test magnetic memory devices. In a particular implementation, a bit error rate of a magnetic memory device may be estimated based, at least in part, on an observed bit error rate in the presence of an externally applied magnetic field.
Claims20
A method comprising:
- providing an integrated magnetic memory device comprising a plurality of memory cells;
- writing to at least some of the plurality of memory cells according to a test pattern;
- reading states of the at least some of the plurality of memory cells;
- while the writing to the at least some of the plurality of memory cells according to the test pattern or the reading states of the at least some of the plurality of memory cells, applying a magnetic field from an external magnetic source to the integrated magnetic memory device;
- determining an observed bit error rate of the integrated magnetic memory device based, at least in part, on a comparison of the read states to the test pattern;
- and
- estimating an operational bit error rate of the integrated magnetic memory device in an absence of an externally applied magnetic field based, at least in part, on the observed bit error rate.
4 more elements
A computing device comprising:
- one or more processors to:
- obtain states read from at some of a plurality of memory cells of an integrated magnetic memory device in a read cycle, the at least some of the plurality of memory cells having been written to in a write cycle according to a test pattern, wherein a magnetic field having been applied from an external magnetic source to the integrated magnetic memory device during the write cycle or the read cycle;
- determine an observed bit error rate of the integrated magnetic memory device based, at least in part, on a comparison of the read states to the test pattern;
- and
- estimate an operational bit error rate of the integrated magnetic memory device in an absence of an externally applied magnetic field based, at least in part, on the observed bit error rate.
2 more elements
An article comprising:
- a non-transitory storage medium having computer-readable instructions stored thereon that are executable by one or more processors to:
- obtain states read from at some of a plurality of memory cells of an integrated magnetic memory device, the at least some of the plurality of memory cells having been written to according to a test pattern, wherein a magnetic field having been applied from an external magnetic source to the integrated magnetic memory device during write cycles or read cycles;
- determine an observed bit error rate of the integrated magnetic memory device based, at least in part, on a comparison of the read states to the test pattern;
- and
- estimate an operational bit error rate of the integrated magnetic memory device in an absence of an externally applied magnetic field based, at least in part, on the observed bit error rate.
2 more elements
Dependencies are inferred from the claim text.