Nonvolatile memory and storage device including same

A nonvolatile memory comprising:

• a substrate including a first string selection line and a second string selection line spaced apart from the first string selection line by a first cutting line;
• a first word line cutting area in the substrate and extending in a first direction;
• a first channel structure passing through the first string selection line;
• and
• a second channel structure passing through the second string selection line,
• wherein the first string selection line is spaced apart in a second direction from the first word line cutting area by a first distance,
• the second string selection line is spaced apart in the second direction from the first word line cutting area by a second distance greater than the first distance, and
• a first threshold voltage of the first string selection line is different from a second threshold voltage of the second string selection line.

A storage device comprising:

• a controller;
• and
• a nonvolatile memory controlled by the controller,
• wherein the nonvolatile memory includes a first memory block including a first selection transistor connected to a first string selection line and a second memory block including a second selection transistor connected to a second string selection line and spaced apart from the first string selection line by a first cutting line,
• the controller is configured to provide a first program command and a second program command different from the first program command to the nonvolatile memory,
• the nonvolatile memory is configured to program the first selection transistor with a first threshold voltage in response to the first program command, and program the second selection transistor with a second threshold voltage different from the first threshold voltage in response to the second program command,
• the controller is further configured to provide a first read command and a second read command different from the first read command to the nonvolatile memory, and
• the nonvolatile memory is further configured to read first data using a first string selection voltage greater than the first threshold voltage in response to the first read command, and read second data using a second string selection voltage greater than the second threshold voltage in response to the second read command.