Data readout circuit of resistive random access memory and resistive random access memory circuit
AssigneeInstitute of Microelectronics, Chinese Academy of Sciences
InventorsFeng Zhang, Qirui Ren
Life of this patent
Estimating the term…
Loading patent…
AssigneeInstitute of Microelectronics, Chinese Academy of Sciences
InventorsFeng Zhang, Qirui Ren
Estimating the term…
A data readout circuit of a RRAM includes: an adaptive current sense amplifier (CSA) and a reference current generator, the adaptive CSA is configured to electrically connect to the RRAM, and the adaptive CSA is electrically connected to the reference current generator; the reference current generator is configured to generate a basic reference current; the adaptive CSA is configured to obtain a reference current according to the basic reference current and a bit-line current of the RRAM; and the adaptive CSA is configured to compare the size of the reference current and that of the bit-line current so as to read out stored data. The present disclosure can improve the problem of data readout error due to the degradation of high resistance state of the RRAM.
A data readout circuit of a resistive random access memory (RRAM), comprising:
Dependencies are inferred from the claim text.