Memory circuit and memory
AssigneeChangxin Memory Technologies, Inc.
InventorSungsoo Chi
Life of this patent
Estimating the term…
Abstract
The present disclosure provides a memory circuit and a memory. The memory circuit at least includes a plurality of memory blocks. Each of the memory blocks includes a first memory sub-block, a second memory sub-block, and a third memory sub-block arranged in sequence; the second memory sub-block includes a first memory unit and a second memory unit; the first memory sub-block and the first memory unit are configured to store high-order bytes; the second memory unit and the third memory sub-block are configured to store low-order bytes; and in an arrangement direction of memory sub-blocks, different memory units that are arranged side by side have different block selection addresses.
Claims15
A memory circuit, comprising:
- a plurality of memory blocks, wherein each of the memory blocks comprises a first memory sub-block, a second memory sub-block, and a third memory sub-block arranged in sequence;
- the second memory sub-block comprises a first memory unit and a second memory unit;
- the first memory sub-block and the first memory unit are configured to store high-order bytes;
- the second memory unit and the third memory sub-block are configured to store low-order bytes;
- and in an arrangement direction of memory sub-blocks, different memory units that are arranged side by side have different block selection addresses.
Dependencies are inferred from the claim text.