Predictive sanitization of an array of memory with capacitive cells and/or ferroelectric cells

A predictive sanitization method performed via a memory system, the method comprising:

• performing a scrubbing operation of memory components of a memory in the memory system;
• detecting a region of the memory to be sanitized;
• and
• performing a sanitization operation of the detected region to prevent the occurrence of failure;
• wherein detecting the region of the memory to be sanitized comprises:
• determining any regions that are about to cross a minimum window limit having a threshold reference, to observe any error for correction and write back data to prevent an accumulation of errors;
• and
• reducing a margin of the minimum window limit and predicting whether the detected region will have at least one error in the future.

A memory system comprising:

• a memory including a plurality of memory components coupled to a memory controller via a memory interface;
• wherein the memory controller is configured to communicate with the memory to control data transmission and configured to:
• (i) perform a scrubbing operation of the memory components, and (ii) detect a region of the memory to be sanitized and perform a sanitization operation of the detected region to prevent the occurrence of failure;
• wherein the memory controller is further configured to, when detecting the region of the memory to be sanitized:
• (a) determine any regions that are about to cross a minimum window limit having a threshold reference, to observe any error for correction and write back data to prevent an accumulation of errors;
• and
• (b) reduce a margin of the minimum window limit and predict whether the detected region will have at least one error in the future.