Utilizing last successful read voltage level in memory access operations

A system comprising:

• a memory device;
• a processing device, operatively coupled to the memory device, the processing device to perform operations comprising:
• responsive to receiving a read error associated with a read operation performed on respect to a memory page of the memory device,
• determining, by performing an error correction operation, a new read voltage level associated with a block family of the memory page of the memory device;
• storing the new read voltage level as a last successful read voltage level in a record of a last successful read voltage level memory data structure associated with the block family;
• responsive to receiving a request to perform a subsequent read operation with respect to the memory page, retrieving the last successful read voltage level from the record of the last successful read voltage level memory data structure associated with the block family of the memory page;
• and
• performing, using the retrieved last successful read voltage level, the subsequent read operation with respect to the memory page.

A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:

• responsive to receiving a read error associated with a read operation performed on a memory page of a memory device,
• determining, by performing an error correction operation, a new read voltage level associated with a block family of the memory page;
• storing the new read voltage level as a last successful read voltage level in a record of a last successful read voltage level memory data structure associated with the block family;
• responsive to receiving a request to perform a subsequent read operation with respect to the memory page, retrieving the last successful read voltage level from the record of the last successful read voltage level memory data structure associated with the block family of the memory page;
• and
• performing, using the retrieved last successful read voltage level, the subsequent read operation with respect to the memory page.