Pellicle intermediary body, pellicle, method for manufacturing of pellicle intermediary body, and pellicle manufacturing method

A pellicle comprising:

• a Si substrate with a ring-like planar shape,
• a Si oxide film which has a ring-like planar shape, formed on a surface of the Si substrate,
• a Si layer which has a ring-like planar shape, formed on a surface of the Si oxide film, and
• a SiC film formed on a surface of the Si layer, wherein
• the Si layer includes a low COP (Crystal Originated Particle) portion which is a part where the number of COPs decreases as it approaches the surface of the Si layer and is formed in a part constituting the surface of the Si layer.

A method for manufacturing a pellicle intermediary body comprising steps of:

• preparing a Si layer which includes a low COP (Crystal Originated Particle) portion which is a part where the number of COPs decreases as it approaches a surface and is formed in a part constituting the surface,
• preparing a first oxide film substrate including a first Si substrate, and a first Si oxide film formed on a surface of the first Si substrate,
• preparing a second oxide film substrate including a second Si substrate, a second Si oxide film formed on a surface of the second Si substrate,
• joining the first Si oxide film to the surface of the Si layer,
• removing a part that constitutes a reverse side of the Si layer after joining the first Si oxide film,
• joining the second Si oxide film to the reverse side of the Si layer after the part constituting the reverse side of the Si layer is removed,
• exposing the first Si oxide film by wet etching the first Si substrate under a condition that an etching rate of Si is faster than an etching rate of Si oxide after joining the second Si oxide film, and
• exposing the surface of the Si layer by removing the first Si oxide film after exposing the first Si oxide film.