Multi-terminal devices using magnetoresistance elements

A sensor comprising:

• a first metal layer portion, a second metal layer portion, and a third metal layer portion each separated by an insulator material;
• a conductive material layer in electrical contact with the first, second, and third metal layer portions;
• and
• a tunnel magnetoresistance (TMR) element positioned on and in electrical contact with the conductive layer,
• wherein a first current is configured to flow from the first metal layer portion, through the conductive material layer, to the third metal layer portion, and
• wherein a second current is configured to flow from the second metal layer portion, through the conductive material layer, through the TMR element, and exiting through a top of the TMR element.

A tunnel magnetoresistance (TMR) element comprising:

• a heavy metal layer;
• a free layer positioned on the heavy metal layer;
• a barrier layer positioned on the free layer;
• and
• a reference layer positioned on the barrier layer,
• wherein the heavy metal layer is configured to generate a transversal spin current in the TMR element in response to a current flowing through the heavy metal layer, and wherein the transversal spin current is proportional to the current flowing through the heavy metal layer, and the transversal spin current causes a resistance of the TMR element to change.