A method of inspecting a semiconductor film layer using a semiconductor film layer inspection apparatus (10) for detecting electrical characteristics of the semiconductor film layer (30) formed on one surface of a substrate (20) and including an oxide semiconductor layer (31), the apparatus comprising:
- a base unit (40) configured to allow the substrate to be seatingly disposed on one surface thereof;
- a
- detection signal generator (200) configured to apply an electrical signal based on close contact with at least two points on one surface of the oxide semiconductor layer to detect the electrical characteristics of the oxide semiconductor layer;
- and a carrier generator (300, 300a, 300b) configured to increase a concentration of a carrier of the oxide semiconductor layer, wherein the detection signal generator (200) comprises:
- a detection probe pin (230) configured to be brought into close contact with one or more points spaced apart from each other on one surface of the oxide semiconductor layer;
- and a detection signal generating and sensing probe (202) configured to generate a detection signal for application to the detection probe pin (230) to detect the electrical characteristics of the oxide semiconductor layer, and configured to sense a detection sensing signal inputted thereto from the detection probe pin (230), wherein the detection probe pin (230) comprises:
- a detection probe pin body (231) disposed spaced apart from the oxide semiconductor layer;
- and a detection probe pin contactor disposed at one end thereof at the detection probe pin body (231) and brought at the another end thereof into direct contact with the oxide semiconductor layer, and wherein the detection probe pin contactor unit (233) at least partially forms a plurality of independently detectable and operable segmented pin contactor unit blocks,
- wherein the method comprises:
- a provision step (S1) of providing the semiconductor film layer inspection apparatus;
- a preparation step (S10) of preparing the substrate (20) having one surface on which the oxide semiconductor layer (31) as an inspection object is formed so that the substrate is disposed on the semiconductor film layer inspection apparatus (10);
- a carrier generation step (S20) of allowing the carrier generator (300) to increase the carrier concentration of the oxide semiconductor layer (31);
- and
- a measurement step (S30) of allowing the detection signal generator (200) to be brought into contact with at least two points on one surface of oxide semiconductor layer (31) to detect the electrical characteristics of the oxide semiconductor layer (31) by applying an electrical signal to the oxide semiconductor layer (31), and
- wherein the measurement step (S30) comprises:
- a sequential measurement step (S31) of acquiring a detection sensing signal as an independently operable detection sensing signal individually or in preset single or plural units of blocks for a plurability of pin contactor unit blocks which are segmented in a preset manner;
- a calibration step (S33) of confirming and calculating a sequential measurement value measured in a target pin contactor unit block using the detection sensing signal acquired individually for the segmented pin contactor unit blocks in the sequential measurement step (S31) as the independently operable detection sensing signal, and determining validity of the calculated sequential measurement value as the independently operable detection sensing signal;
- and
- a measurement confirmation step (S35) of outputting final electrical characteristics of the oxide semiconductor layer as a result of determination in the calibration step (S33).