Method for the deposition of monocrystalline or polycrystalline tin alloys on crystallographcially mis-matched or amorphous substrates

A method for depositing a monocrystalline or polycrystalline tin alloy layer on a substrate, comprising the steps of:

• selecting tin halide as a tin source;
• selecting an alloying metal precursor from the group consisting of disilane, trisilane, digermane, trigermane, and a mixture of two or more of the foregoing;
• selecting a substrate from the group consisting of amorphous substrates and crystallographically mis-matched substrates, wherein the substrate is selected from the group consisting of TiN, and TiW;
• generating an inert gas plasma in a remote plasma generation reactor, wherein the inert gas is xenon;
• contacting the inert gas plasma with the tin halide to provide an activated tin halide flow stream;
• contacting the inert gas plasma with the alloying metal precursor to provide an activated alloying metal flow stream;
• directing the activated tin halide flow stream and activated alloying metal flow stream to an alloy deposition chamber physically remote from a plasma chamber;
• and
• depositing the monocrystalline or polycrystalline tin alloy layer on the substrate in the alloy deposition chamber.