Epi-growth apparatus of separate chamber type

A separate chamber type epi-growth apparatus comprising:

• a reaction chamber having a growth space;
• a substrate mounting unit disposed in the growth space and allowing a substrate to be mounted thereon;
• a metal oxide treating unit having a metal oxide treatment chamber for treating a metal oxide in an evaporation space which is independent from the growth space so that metal ions and oxygen ions generated within the evaporation space from the metal oxide are supplied from the evaporation space to the substrate mounted in the growth space within the reaction chamber;
• an arsenic supply unit installed to face the substrate and supplying arsenic ions to the substrate mounted in the growth space;
• an oxygen radical supply unit installed to face the substrate and additionally supplying oxygen radicals to the substrate mounted in the growth space;
• and
• a vacuum control unit independently controlling a vacuum state of the reaction chamber and the metal oxide treating unit such that the metal ions and the oxygen ions pass from the evaporation space to the growth space;
• and
• wherein the substrate mounting unit is coupled, via at least one electromagnet, to a cradle that is installed in the reaction chamber.