Semiconductor crystal growth method and device

A device for ensuring stability of parameters in a crystal pulling process, wherein the device comprises a memory storing executable program instructions and a controller, wherein the executable program instructions upon execution by the controller cause the device to perform operations comprising:

• obtaining an initial position CP0 of a graphite crucible used in a semiconductor crystal growth process for a first time;
• obtaining a current production batch N of the graphite crucible, the current production batch N characterizing that the graphite crucible currently performs a semiconductor crystal growth process for a Nth time;
• determining a total weight W(N) of polysilicon raw materials to be loaded into a quartz crucible sleeved in the graphite crucible based on the current production batch N, wherein the total weight W(N) of polysilicon raw materials enables to keep an initial position of liquid surface of a silicon melt in the quartz crucible stable while keeping the initial position CP0 of the graphite crucible unchanged, and wherein the determining a total weight W(N) of polysilicon raw materials to be loaded into a quartz crucible sleeved in the graphite crucible further comprises:
• obtaining a charging amount W(1) of polysilicon raw materials loaded in the quartz crucible for the first time of the semiconductor growth process,
• determining an increase of charging amount dW to be increased in the quartz crucible for the Nth time of the semiconductor growth process, and
• computing a sum of the charging amount W(1) and the increase of charging amount dW to obtain the total weight W(N);
• and
• loading the total weight W(N) of polysilicon raw materials into the quartz crucible sleeved in the graphite crucible to keep the initial position of liquid surface of the silicon melt in the quartz crucible stable while keeping the initial position CP0 of the graphite crucible unchanged.