Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition

An apparatus for use in processing substrates, the apparatus comprising:

• a showerhead formed by a plurality of layers that are bonded together to form a contiguous structure, wherein:
• the showerhead includes a plurality of through-holes extending from a top surface of the showerhead to a bottom surface of the showerhead opposite the top surface,
• the showerhead includes a secondary gas plenum located in between the top surface of the showerhead and the bottom surface of the showerhead,
• a plurality of secondary gas injection ports lead from the secondary gas plenum to the bottom surface of the showerhead,
• a cylindrical wall encircles the through-holes and the plurality of secondary gas injection ports, extends from the bottom surface of the showerhead by a first distance, and is offset radially inward from an outer edge of the showerhead.