Method of manufacturing semiconductor device, non-transitory computer-readable recording medium, substrate processing apparatus and substrate processing method

A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform:

• (a) performing (a-1) supplying in parallel a metal-containing gas and a reducing gas that contains silicon and hydrogen and is free of halogen to a substrate in a process chamber, and (a-2) exhausting an inner atmosphere of the process chamber;
• (b) repeatedly performing (a) a first number of times;
• (c) supplying a nitrogen-containing gas to the substrate in the process chamber and exhausting the inner atmosphere of the process chamber after performing (b);
• and
• (d) repeatedly performing (a) a second number of times.

A substrate processing apparatus comprising:

• a process chamber in which a substrate is processed;
• a first gas supplier configured to supply a metal-containing gas to the substrate;
• a second gas supplier configured to supply a reducing gas containing silicon and hydrogen and free of halogen to the substrate;
• a third gas supplier configured to supply a nitrogen-containing gas to the substrate;
• an exhauster configured to exhaust an inner atmosphere of the process chamber;
• and
• a controller configured to be capable of controlling the first gas supplier, the second gas supplier, the third gas supplier and the exhauster to perform:
• (a) performing (a-1) supplying in parallel a metal-containing gas and a reducing gas that contains silicon and hydrogen and is free of halogen to a substrate in a process chamber, and (a-2) exhausting an inner atmosphere of the process chamber;
• (b) repeatedly performing (a) a first number of times;
• (c) supplying a nitrogen-containing gas to the substrate in the process chamber and exhausting the inner atmosphere of the process chamber after performing (b);
• and
• (d) repeatedly performing (a) a second number of times.

A substrate processing method comprising:

• (a) performing (a-1) supplying in parallel a metal-containing gas and a reducing gas that contains silicon and hydrogen and is free of halogen to a substrate in a process chamber, and (a-2) exhausting an inner atmosphere of the process chamber;
• (b) repeatedly performing (a) a first number of times;
• (c) supplying a nitrogen-containing gas to the substrate in the process chamber and exhausting the inner atmosphere of the process chamber after performing (b);
• and
• (d) repeatedly performing (a) a second number of times.