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US 12,000,030 B2Granted
Copper alloy film with high strength and high conductivity
AssigneeApple Inc.
InventorsHerng-Jeng Jou, Jacob L. Smith, Weiming Huang
Life of this patent
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Abstract
A method of forming a component can include electrochemically depositing a metallic material onto a carrier component to a thickness of greater than 50 microns. The metallic material can include crystal grains and at least 90% of the crystal grains can include nanotwin boundaries. The metallic material can include a Copper-Silver alloy (Cu—Ag) with between about 0.5-2 at %-Ag.
Claims14
An alloy, comprising:
- copper (Cu);
- one of silver (Ag) or cobalt (Co), the alloy comprising between 0.5-2 at % of one of the silver or the cobalt;
- and
- crystal grains, at least 90% of the crystal grains comprising nanotwin boundaries.
1 more element
An electronic device, comprising:
- a conductive component comprising a metallic alloy including a series of crystal grains, the metallic alloy comprising a copper (Cu) alloy, wherein the copper alloy comprises between 0.5-2 at % of one of silver (Ag) or Cobalt (Co);
- and
- at least 90% of the series of crystal grains comprising nanotwin boundaries.
Dependencies are inferred from the claim text.