Bulk ruthenium chemical mechanical polishing composition

A method of removing ruthenium material from a substrate, wherein the substrate comprises the ruthenium material and a second material selected from the group consisting of tetraethylorthosilicate (TEOS), a titanium material, and a combination thereof, and wherein the ruthenium material is applied with a chemical vapor deposition process or a physical vapor deposition process, the method comprising the steps of:

• applying a composition to the substrate while polishing the substrate with a polishing pad, thereby removing the ruthenium material and the second material;
• removing the ruthenium material at a first rate of removal;
• and
• removing the second material at a second rate of removal, wherein the first rate of removal is greater than the second rate of removal,
• the composition comprising:
• ammonia, present in an amount of about 0.03 wt % to about 0.05 wt %, based on the total weight of the composition;
• an oxygenated halogen compound present in an amount of about 0.01 wt % to about 10 wt %, based on the total weight of the composition, wherein the oxygenated halogen compound comprises a halogen selected from the group consisting of iodine, bromine, chlorine, and any combinations thereof;
• an abrasive;
• optionally, an acid;
• water;
• and
• less than about 1 wt % of any additional components,
• wherein the pH of the polishing composition is between about 6 and 8, and
• wherein when the polishing of the substrate with a polishing pad is at a downforce of 1.5 psi and a composition flow rate of 175 mL/min, a ratio of the first rate of removal to the second rate of removal is at least 522/33.