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US 11,999,616 B2Granted
Dielectric thin film, capacitor element, and electronic circuit board
AssigneeTDK Corporation
InventorsKumiko Yamazaki, Wakiko Sato, Junichi Yamazaki
Life of this patent
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Abstract
A capacitive element and a dielectric thin film having a small dielectric loss and a large relative permittivity, particularly at low frequencies. [Solution] This dielectric thin film includes an A-B—O—N oxynitride. When the A-B—O—N oxynitride is represented by the compositional formula AaBbOoNn, (o+n)/a<3.00 is satisfied.
Claims6
A capacitor element comprising a dielectric thin film, wherein
- the dielectric thin film consists of an A-B—O—N oxynitride, in which the A-B—O—N oxynitride is represented by a compositional formula of AaBbOoNn that satisfies (o+n)/a<3.00,
- A and B are elements capable of forming an A-B—O oxide having a perovskite structure,
- A is one or more selected from Sr, Ba, Ca, La, Nd, Na, and K;
- and B is one or more selected from Ta, Nb, Ti, and W, and
- a crystal structure of the A-B—O—N oxynitride is a non-perovskite structure.
2 more elements
Dependencies are inferred from the claim text.