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US 11,999,615 B2Granted
Nitride piezoelectric body and MEMS device using same
AssigneeNational Institute of Advanced Industrial Science and Technology
InventorsKenji Hirata, Hiroshi Yamada, Masato Uehara, Sri Ayu Anggraini, Morito Akiyama
Life of this patent
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Abstract
An object is to provide a piezoelectric body having a value indicating a higher performance index (d33, e33, C33, g33, and/or k2) than aluminum nitride not doped with any element. The piezoelectric body is represented by a chemical formula Al1-X-YMgXMYN where X+Y is less than 1, X is in a range of more than 0 and less than 1, and Y is in a range of more than 0 and less than 1.
Claims8
A nitride material represented by a chemical formula
- Al1-X-YMgXMYN
- where X+Y is less than 1,
- X is in a range of more than 0 and less than 1, and
- Y is in a range of more than 0 and less than 1, and wherein
- M represents any one of Cr, Mn, Fe, Co, Ni, Mo, Tc, Ru, Rh, Pd, Ag, W, Re, Os, Ir, Pt, and Au.
2 more elements
Dependencies are inferred from the claim text.