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US 11,999,614 B2Granted
Ferroelectric thin film
AssigneesKorea Advanced Institute of Science and Technology, Research & Business Foundation Sungkyunkwan University
InventorsHeejun Yang, Eunji Hwang, Yonas Assefa Eshete
Life of this patent
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Abstract
Provided is a thin film including Mo1-xWxTe2 stacked in a plurality of layers. The thin film has a thickness of about 1 nm to about 100 nm in a stacking direction, has a symmetric lattice structure at a temperature higher than a threshold temperature, and has an asymmetric lattice structure at a temperature equal to or lower than the threshold temperature.
Claims19
An electronic device comprising:
- a thin film material layer including a first surface and a second surface opposing each other;
- an upper electrode on the first surface of the thin film material layer;
- a lower electrode on the second surface of the thin film material layer;
- and
- a channel layer between the thin film material layer and the upper electrode,
- wherein the thin film material layer includes Mo1-xWxTe2 stacked in a plurality of layers, where x is at least 0.4 and less than 1,
- the Mo1-xWxTe2 has a thickness of about 1 nm to about 100 nm in a stacking direction,
- the Mo1-xWxTe2 has a symmetric lattice structure at a temperature higher than a threshold temperature,
- the Mo1-xWxTe2 has an asymmetric lattice structure at a temperature equal to or lower than the threshold temperature, and
- the upper electrode includes a pair of electrodes connected to the channel layer.
7 more elements
A electronic device comprising:
- a thin film material layer including a first surface and a second surface opposing each other;
- an upper electrode on the first surface of the thin film material layer;
- a lower electrode on the second surface of the thin film material layer;
- and
- a channel layer between the thin film material layer and the upper electrode,
- wherein the thin film material layer includes Mo1-xWxTe2 stacked in a plurality of layers, where x is at least 0.4 and less than 1,
- the Mo1-xWxTe2 has a thickness of about 1 nm to about 100 nm in a stacking direction,
- the Mo1-xWxTe2 has ferroelectricity at a temperature equal to or lower than a threshold temperature,
- the Mo1-xWxTe2 has a degree of polarization which increases as the temperature equal to or lower than the threshold temperature decreases when x is constant, and
- the upper electrode includes a pair of electrodes connected to the channel layer.
7 more elements
An electronic device comprising:
- a thin film material layer including a first surface and a second surface opposing each other;
- an upper electrode on the first surface of the thin film material layer;
- and
- a lower electrode on the second surface of the thin film material layer,
- wherein the thin film material layer includes Mo1-xWxTe2 stacked in a plurality of layers, where x is at least 0.4 and less than 1,
- the Mo1-xWxTe2 has a thickness of about 1 nm to about 100 nm in a stacking direction,
- the Mo1-xWxTe2 has a symmetric lattice structure at a temperature higher than a threshold temperature,
- the Mo1-xWxTe2 has an asymmetric lattice structure at a temperature equal to or lower than the threshold temperature, and
- the upper electrode and the lower electrode comprise graphite.
6 more elements
Dependencies are inferred from the claim text.