Method for polishing semiconductor substrate
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJames Jeng-Jyi Hwang, He Hui Peng, Jiann Lih Wu, Chi-Ming Yang
Life of this patent
Estimating the term…
Abstract
A method for polishing a semiconductor substrate includes the following operations. A semiconductor substrate is received. An abrasive slurry having a first temperature is dispensed to a polishing surface of a polishing pad. The semiconductor substrate is polished. The abrasive slurry have a second temperature is dispensed to the polishing surface of the polishing pad during the polishing of the semiconductor substrate. The second temperature is different from the first temperature.
Claims20
A method for polishing a semiconductor substrate, comprising:
- receiving a semiconductor substrate;
- dispensing an abrasive slurry having a first temperature to a polishing surface of a polishing pad;
- polishing the semiconductor substrate;
- cooling the abrasive slurry to a second temperature lower than the first temperature;
- and
- dispensing the abrasive slurry having the second temperature to the polishing surface of the polishing pad during the polishing of the semiconductor substrate.
A method for polishing a substrate, comprising:
- receiving a substrate comprising a feature and a layer covering the feature, wherein the feature and the layer comprise different materials;
- heating an abrasive slurry to a first temperature;
- dispensing the abrasive slurry having the first temperature to a polishing surface of a polishing pad;
- polishing a surface of the layer;
- cooling the abrasive slurry to a second temperature;
- and
- dispensing the abrasive slurry having the second temperature to the polishing surface of the polishing pad at an end of the polishing of the substrate.
A method for polishing a substrate, comprising:
- receiving a substrate comprising a feature and a layer covering the feature, wherein the feature and the layer comprise different materials;
- heating an abrasive slurry to a first temperature by a slurry temperature control device;
- removing a portion of the layer by a polishing using the abrasive slurry having the first temperature;
- cooling the abrasive slurry to a second temperature by the slurry temperature control device;
- and
- removing a portion of the layer and a portion of the feature by the polishing using the abrasive slurry having the second temperature.
Dependencies are inferred from the claim text.