Silicon carbide magnetometer and associated material formation methods

A method for forming a silicon carbide material with a plurality of negatively charged silicon mono-vacancy defects, the method comprising:

• irradiating a silicon carbide sample to form an irradiated silicon carbide sample;
• annealing the irradiated silicon carbide sample in an annealing operation to form an annealed silicon carbide sample;
• and
• quenching the annealed silicon carbide sample, wherein the quenching comprises heating the annealed silicon carbide sample to a maximum temperature and quenching the annealed silicon carbide sample to form the silicon carbide sample with the plurality of negatively charged silicon mono-vacancy defects,
• wherein the silicon carbide sample with the plurality of negatively charged silicon mono-vacancy defects exhibits a shot noise sensitivity in a range of about 3.5 nT/√{square root over (Hz)} to 2.0 nT/√{square root over (Hz)}.