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US 11,993,849 B2Granted
Carbon hard mask, film forming apparatus, and film forming method
AssigneesTokyo Electron Limited, National University Corporation Tokai National Higher Education and Research System
InventorsMasaru Hori, Makoto Sekine, Hirotsugu Sugiura, Tsuyoshi Moriya, Satoshi Tanaka, Yoshinori Morisada
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Abstract
According to one embodiment, there is provided a carbon hard mask laminated on an etching target film, in which the concentration ratio of a methylene group CH2 and a methyl group CH3 contained in the carbon hard mask satisfies the expression CH2/(CH2+CH3)≥0.5.
Claims3
A film forming apparatus comprising:
- a chamber;
- a stage provided in the chamber and having an object placed thereon;
- a gas supply configured to supply a hydrogen gas and a carbon-containing gas into the chamber;
- a power supply configured to supply power having a predetermined frequency into the chamber to generate plasma of the hydrogen gas and the carbon-containing gas to form a carbon hard mask on the object by active species contained in the plasma;
- and a pressure adjustment part configured to adjust an internal pressure of the chamber, a controller configured to control:
- the gas supply, the power supply, and the pressure adjustment part so that a value of a product of electron density (Ne[cm−3]) in the plasma, an excitation temperature (Te[eV]) of hydrogen atoms in the plasma, and a residence time (τ[ms]) of a gas in the plasma satisfies a following expression (1):
- 0<(Ne×Te2×τ)≤4×108 (1).
4 more elements
A method of forming a film, comprising:
- loading an object into a chamber and placing the object on a stage provided in the chamber;
- supplying a hydrogen gas and a carbon-containing gas into the chamber;
- and supplying power having a predetermined frequency into the chamber to generate plasma of the hydrogen gas and the carbon-containing gas to form a carbon hard mask on the object by active species contained in the plasma, wherein flow rates of the hydrogen gas and the carbon-containing gas, the frequency and magnitude of power having a predetermined frequency supplied in the chamber, a volume of a space in which the plasma is generated, and an internal pressure of the chamber are controlled so that a value of the product of electron density (Ne[cm−3]) in the plasma, an excitation temperature (Te[eV]) of hydrogen atoms in the plasma, and a residence time (τ[ms]) of a gas in the plasma satisfies a following expression (2):
- 0<(Ne×Te2×τ)≤4×108 (2).
1 more element
Dependencies are inferred from the claim text.