Selective deposition of metal oxide by pulsed chemical vapor deposition

A method of forming a metal oxide material, comprising:

• positioning a substrate within a processing chamber, wherein the substrate comprises a passivated surface and a non-passivated surface, and wherein the non-passivated surface is terminated with hydride groups, hydroxide groups, or a combination thereof;
• and
• depositing a laminate film selectively on the non-passivated surface while the passivated surface remains at least substantially free of the laminate film, wherein:
• the laminate film comprises two or more pairs of alternating layers of a first metal oxide layer and a second metal oxide layer;
• each of the first metal oxide layer and the second metal oxide layer independently has a thickness of about 0.05 nm to about 10 nm;
• a first metal alkoxide precursor is thermally decomposed to produce the first metal oxide layer during a first pulsed-chemical vapor deposition process;
• a second metal alkoxide precursor is thermally decomposed to produce the second metal oxide layer during a second pulsed-chemical vapor deposition process;
• the first metal alkoxide precursor and the second metal alkoxide precursor have different metals;
• the substrate is maintained at a first temperature during the first pulsed-chemical vapor deposition process and at a second temperature during the second pulsed-chemical vapor deposition process;
• and
• each of the first temperature and the second temperature is independently at about 150° C. to about 450° C.

A method of forming a metal oxide material, comprising:

• positioning a substrate within a processing chamber, wherein the substrate comprises a passivated surface and a non-passivated surface, and wherein the non-passivated surface is terminated with hydride groups, hydroxide groups, or a combination thereof;
• exposing the substrate to a first metal alkoxide precursor to produce a first metal oxide layer on or over the non-passivated surface while the passivated surface remains at least substantially free of the first metal oxide layer, wherein the first metal alkoxide precursor is thermally decomposed to produce the first metal oxide layer while the substrate is maintained at a first temperature of about 150° C. to about 350° C.;
• exposing the substrate to a second metal alkoxide precursor to produce a second metal oxide layer on the first metal oxide layer while the passivated surface remains at least substantially free of the second metal oxide layer, wherein the second metal alkoxide precursor is thermally decomposed to produce the second metal oxide layer while the substrate is maintained at a second temperature of about 150° C. to about 350° C.;
• and
• sequentially repeating exposing the substrate to the first metal alkoxide precursor and the second metal alkoxide precursor to produce a laminate film comprising alternating layers of the first and second metal oxide layers, wherein the laminate film is amorphous, and wherein the laminate film comprises about 10 pairs to about 100 pairs of the first and second metal oxide layers, wherein:
• each of the first metal oxide layer and the second metal oxide layer independently has a thickness of about 0.05 nm to about 10 nm;
• and the first metal oxide layer and the second metal oxide layer contain different metal oxides.