Substrate processing method and substrate processing apparatus

A substrate processing method comprising:

• placing a substrate on a stage provided inside a processing container;
• and
• forming a ruthenium film on the substrate,
• wherein forming the ruthenium film comprises repeating a cycle including:
• supplying a ruthenium-containing gas and a CO gas into the processing container;
• and
• stopping the supply of the ruthenium-containing gas and the CO gas into the processing container and exhausting a gas within the processing container, and
• after performing the repeating the cycle, continuously supplying the ruthenium-containing gas and the CO gas into the processing container, without performing evacuating, for a processing time set such that a thickness of the ruthenium film becomes a desired thickness,
• wherein, in the supplying the ruthenium-containing gas and the CO gas of the repeating the cycle, the CO gas is supplied before a timing of starting the supply of the ruthenium-containing gas,
• wherein, in the repeating the cycle, a supply time of the ruthenium-containing gas is 25 sec or more and 200 sec or less or a purge time of the exhausting the gas within the processing container is 5 sec or more and 60 sec or less, so as to increase smoothness of the ruthenium film,
• wherein, in the forming the ruthenium film, a temperature of the substrate is 130 to 250 degrees C., a pressure is 5 to 200 mTorr, a flow rate of the CO gas is 50 to 300 sccm, and a gap between the stage and a gas ejection mechanism is 50 to 60 mm, and
• wherein the ruthenium-containing gas is Ru3(CO)12.