Building block for electro-optical integrated indium-phosphide based phase modulator

A photonic integrated circuit, PIC, comprising a plurality of semiconductor layers on a substrate, the plurality of semiconductor layers forming at least one of a PIN or PN doping structure, the PIC comprising:

• a waveguide arranged for conducting light waves, the waveguide comprising a waveguiding layer, which is one of the layers of the plurality of semiconductor layers;
• an optical element comprising a waveguiding layer, which is one of the layers of the plurality of semiconductor layers, which waveguiding layers of the waveguide and the optical element are connected to one another, wherein the optical element is operable in reverse-bias mode, and wherein the optical element comprises a contact layer arranged for connecting to a voltage source, wherein the waveguide comprises at least one conducting contact proximal to the optical element, and wherein at least one of:
• the at least one conducting contact is connected to an electrical ground,
• the optical element is an electro refractive modulator, or
• the optical element is a photodetector;
• and
• at least one isolation section arranged between the contact layer and the at least one conducting contact.

A method of fabricating a photonic integrated circuit, PIC, comprising providing a plurality of semiconductor layers on a substrate, the plurality of semiconductor layers forming at least one of a PIN or PN doping structure, the PIC comprising:

• a waveguide arranged for conducting light waves, the waveguide comprising a waveguiding layer, which is one of the layers of the plurality of semiconductor layers;
• an optical element comprising a waveguiding layer, which is one of the layers of the plurality of semiconductor layers, which waveguiding layers of the waveguide and the optical element are connected to one another, wherein the optical element is operable in reverse-bias mode, and wherein the optical element comprises a contact layer arranged for connecting to a voltage source, wherein the waveguide comprises at least one conducting contact proximal to the optical element, and wherein at least one of:
• the at least one conducting contact is connected to an electrical ground,
• the optical element is an electro refractive modulator, or
• the optical element is a photodetector;
• and
• at least one isolation section arranged between the contact layer and the at least one conducting contact.

A method of fabricating a photonic integrated circuit, PIC, comprising providing a plurality of semiconductor layers on a substrate, the plurality of semiconductor layers forming at least one of a PIN or PN doping structure, the PIC comprising:

• a waveguide arranged for conducting light waves, the waveguide comprising at least part of a waveguiding layer, which is one of the layers of the plurality of semiconductor layers;
• an optical element comprising at least part of the waveguiding layer, which is one of the layers of the plurality of semiconductor layers, wherein the at least parts of the waveguiding layer of the waveguide and the optical element are connected to one another, wherein the optical element is operable in reverse-bias mode, and wherein the optical element comprises a contact layer arranged for connecting to a voltage source;
• a plurality of conducting contacts connected to one another by a metallic conducting layer, wherein the waveguide comprises at least one conducting contact of the plurality of conducting contacts, the at least one conducting contact proximal to the optical element;
• and
• at least one isolation section arranged between the contact layer and the at least one conducting contact.