Method for manufacturing silicon single crystal wafer and silicon single crystal wafer

A silicon single crystal wafer for a multilayer structure device, wherein

• the silicon single crystal wafer is composed of an NV region,
• has at least a DZ layer and a BMD layer which is positioned immediately below the DZ layer in order from a surface of the silicon single crystal wafer,
• the DZ layer has a thickness of 5 to 12.5 μm and the BMD layer has a BMD density of 1×1011/cm3 or higher,
• when a dent with a dent depth of Depth on the surface of the silicon single crystal wafer is formed so as to satisfy a relational equation
• Depth=3×Fz0.6
• where Depth is a dent depth (unit:
• μm), Fz is a pushing pressure (unit:
• N), and Depth is 0.01 μm or more and less than 5.00 μm,
• by applying the pushing pressure Fz, the silicon single crystal wafer has a stacked structure with at least 3 layers including a strained layer, a DZ layer, and a BMD layer in order from the surface, and
• when the silicon single crystal wafer having the dent formed is subjected to a heat treatment at a temperature of 900° C. for 1 hour, a rosette length of a dislocation of the DZ layer after the heat treatment becomes shorter than a rosette length of a dislocation of the DZ layer before the heat treatment.