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US 11,948,967 B2Granted
Polysilicon resistor
AssigneeHuawei Technologies Co., Ltd.
InventorsDing Li, Shuai Du, Yixing Chu
Life of this patent
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Abstract
A polysilicon resistor is disclosed, to reduce a voltage coefficient of the polysilicon resistor. The polysilicon resistor includes: a polysilicon layer (101), a voltage module (102), and a substrate layer (103), where the voltage module (102) is configured to transmit a voltage on the polysilicon layer (101) to the substrate layer (103).
Claims19
A polysilicon resistor, comprising:
- a polysilicon layer;
- a substrate layer;
- and
- a voltage module to transmit a voltage on the polysilicon layer to the substrate layer, wherein the voltage module comprises a buffer, wherein an input of the buffer is connected to the polysilicon layer and an output of the buffer is connected to the substrate layer.
1 more element
A polysilicon resistor, comprising:
- a polysilicon layer having a polysilicon node disposed thereon;
- a buffer having an input and an output;
- and
- a substrate layer having a substrate node disposed thereon, wherein the substrate node is connected to the output of the buffer and the input of the buffer is connected to the polysilicon node.
1 more element
Dependencies are inferred from the claim text.