Color and infrared image sensor

A color and infrared image sensor comprising a silicon substrate, MOS transistors formed in the substrate and on the substrate, first photodiodes at least partly formed in the substrate, a photosensitive layer covering the substrate, and color filters, the photosensitive layer being interposed between the substrate and the color filters, the image sensor further comprising first and second electrodes on either side of the photosensitive layer and delimiting second photodiodes in the photosensitive layer, the first photodiodes being configured to absorb the electromagnetic waves of the visible spectrum and of a first portion of the infrared spectrum and the photosensitive layer being configured to absorb the electromagnetic waves of the visible spectrum and to give way to the electromagnetic waves of said first portion of the infrared spectrum, the image sensor comprising, for each pixel of the color image to be acquired, at least first, second, and third sub-pixels each comprising one of the second photodiodes, one of the first photodiodes, and one of the color filters, the color filters of the first, second, and third sub-pixels giving way to electromagnetic waves in different frequency ranges of the visible spectrum, the image sensor comprising, for each pixel of the color image to be acquired, at least one fourth sub-pixel comprising one of the second photodiodes and one of the color filters, the color filter of the fourth sub-pixel being configured to block the electromagnetic waves of the visible spectrum and to give way to electromagnetic waves in a third portion of the infrared spectrum between the visible spectrum and the first portion of the infrared spectrum, the photosensitive layer being configured to absorb electromagnetic waves in said third portion of the infrared spectrum.