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US 11,910,733 B2Granted
Generating self-aligned heater for PCRAM using filaments
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorSheng-Chih Lai
Life of this patent
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Abstract
A method includes forming a bottom electrode, forming a dielectric layer, forming a Phase-Change Random Access Memory (PCRAM) region in contact with the dielectric layer, and forming a top electrode. The dielectric layer and the PCRAM region are between the bottom electrode and the top electrode. A filament is formed in the dielectric layer. The filament is in contact with the dielectric layer.
Claims20
A method comprising:
- forming a plurality of bottom electrodes;
- forming a first dielectric layer, wherein the first dielectric layer continuously extends to regions directly over the plurality of bottom electrodes, and wherein an entirety of the first dielectric layer is formed of a homogeneous material;
- forming a plurality of Phase-Change Random Access Memory (PCRAM) regions, each being in contact with a surface of the first dielectric layer that is formed of the homogeneous material;
- forming a plurality of top electrodes over and electrically connected to the plurality of PCRAM regions;
- and
- forming a plurality of filaments in the first dielectric layer, wherein the plurality of filaments are in contact with the plurality of PCRAM regions.
3 more elements
A method comprising:
- forming a plurality of bottom electrodes in a first dielectric layer;
- forming a second dielectric layer over and contacting the plurality of bottom electrodes and the first dielectric layer;
- forming a Phase-Change Random Access Memory (PCRAM) layer over a top surface of the second dielectric layer;
- patterning the PCRAM layer in an etching process to form a plurality of PCRAM elements, wherein the etching process is performed using the second dielectric layer as an etch stop layer;
- and
- forming a plurality of filaments in the second dielectric layer, wherein the plurality of filaments are formed sequentially, and wherein the plurality of filaments belong to different Resistive Random-Access Memory (ReRAM) cells.
3 more elements
A method comprising:
- forming a plurality of bottom electrodes;
- forming a dielectric layer over and contacting the plurality of bottom electrodes;
- forming a Phase-Change Random Access Memory (PCRAM) layer over the dielectric layer;
- patterning the PCRAM layer to form a plurality of PCRAM elements;
- and
- forming a plurality of top electrodes over the plurality of PCRAM elements, wherein the plurality of PCRAM elements are electrically and physically separated from either the plurality of bottom electrodes or the plurality of top electrodes, and wherein at a time after the plurality of top electrodes have been formed, the dielectric layer is a homogeneous layer formed of a homogeneous dielectric material.
3 more elements
Dependencies are inferred from the claim text.