Flopping-mode electric dipole spin resonance

A system for operating a nanoscale semiconductor quantum device, the system comprising:

• a signal generator configured to generate an oscillating electrical signal;
• and
• a structure disposed in a cavity, the structure comprising:
• at least one magnetic field source configured to supply an inhomogeneous magnetic field;
• at least one semiconducting layer;
• and
• one or more conducting layers comprising a source and a drain and configured to:
• define at least two quantum states in the at least one semiconducting layer;
• and
• cause, based on the oscillating electrical signal generated by the signal generator and supplied by the one or more conducting layers, an electron to move back and forth between the at least two quantum states in the presence of the inhomogeneous magnetic field, wherein the movement of the electron between the at least two quantum states generates an oscillating magnetic field to drive a quantum transition between a spin-up state and spin-down state of the electron thereby implementing a qubit gate on a spin state of the electron,
• wherein the at least one magnetic field source is located in a first layer of a material stack of the structure and the one or more conducting layers are located in a second layer, of the material stack, different from the first layer.