Subtractive top via as a bottom electrode contact for an embedded memory
AssigneeInternational Business Machines Corporation
InventorsAshim Dutta, Chih-Chao Yang
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Abstract
Embodiments of the invention include a subtractive top via as a bottom electrode contact for an embedded memory structure. Forming the bottom electrode contact includes depositing a conductive material on an underlayer and etching the conductive material to form an extended via and a conductive pad as an integral unit. The extended via extends from the conductive pad such that the extended via is adjacent to a memory structure, the extended via being formed as a first contact for the memory structure.
Claims19
A method comprising:
- depositing a conductive material on an underlayer;
- and
- etching the conductive material to form both an extended via elongated in a first dimension and a conductive pad elongated in a second dimension perpendicular to the first dimension as an integral unit, the extended via extending from the conductive pad such that the extended via is adjacent to a memory structure, the extended via being formed as a first contact for the memory structure, wherein the conductive material is patterned into a plurality of portions in preparation for the etching of the conductive material to form the extended via and the conductive pad from one of the plurality of portions.
A structure comprising:
- an integral unit comprising an extended via and a conductive pad, the integral unit having been formed of a single conductive material so as to have no seam between the extended via and the conductive pad, the extended via extending from the conductive pad;
- and
- a memory structure adjacent to the extended via, a contact being formed adjacent to the memory structure opposite the extended via.
A method of forming a structure, the method comprising:
- forming an integral unit comprising an extended via and a conductive pad, the integral unit having been formed of a single conductive material so as to have no seam between the extended via and the conductive pad, the extended via extending from the conductive pad;
- and
- forming a memory structure adjacent to the extended via, a contact being formed adjacent to the memory structure opposite the extended via.
Dependencies are inferred from the claim text.