Display device and method of manufacturing the same

A display device comprising:

• a substrate;
• a pixel circuit layer arranged on the substrate and comprising at least one thin-film transistor;
• a via-insulating layer arranged on the pixel circuit layer;
• a first pixel electrode arranged on the via-insulating layer;
• a second pixel electrode and a third pixel electrode, arranged on the via-insulating layer;
• a bank layer arranged on the via-insulating layer and defining a first opening exposing at least a portion of the first pixel electrode;
• a first intermediate layer arranged on the first pixel electrode in the first opening and which emits light including light of a first wavelength;
• a second intermediate layer arranged on the second pixel electrode and which emits light including light of a second wavelength;
• and a third intermediate layer arranged on the third pixel electrode and which emits light including light of a third wavelength;
• an opposite electrode arranged on the first intermediate layer and including a first region overlapping the first intermediate layer in a plan view;
• and
• an upper substrate arranged on the opposite electrode,
• wherein an optical distance D1 between the first region and the upper substrate satisfies an equation below:
• D1=A+(λ1)/2×n,
• where A denotes a minimum optical distance between the first region and the upper substrate at a point where light of λ1 has a maximum intensity, n is an integer equal to or greater than 0, and λ1 denotes the first wavelength,
• wherein the bank layer defines a second opening and a third opening exposing a portion of the second pixel electrode and a portion of the third pixel electrode, respectively, and
• the opposite electrode includes a second region and a third region overlapping the second intermediate layer and the third intermediate layer, respectively, in the plan view,
• wherein an optical distance D2 between the second region and the upper substrate and an optical distance D3 between the third region and the upper substrate in a thickness direction satisfy equations below, respectively:
• D2=B+(λ2)/2×n2
• D3=C+(λ3)/2×n3
• where B is a minimum optical distance between the second region and the upper substrate at a point where light of λ2 has a maximum intensity, C is a minimum optical distance between the third region and the upper substrate at a point where light of λ3 has a maximum intensity, n2 and n3 are integers equal to or greater than 0, and λ2 and λ3 denote the second wavelength and the third wavelength, respectively,
• wherein regions of the via-insulating layer that overlap the first pixel electrode, the second pixel electrode, and the third pixel electrode, respectively, have different thickness from each other, and the differences in the thickness of the via-insulating layer are determined based on differences in the first to third wavelengths.