Solid-state imaging element and solid-state imaging device

A solid-state imaging element comprising:

• a photoelectric conversion layer;
• a first electrode and a second electrode opposed to each other with the photoelectric conversion layer interposed therebetween;
• a semiconductor layer provided between the first electrode and the photoelectric conversion layer;
• an accumulation electrode opposed to the photoelectric conversion layer with the semiconductor layer interposed therebetween;
• and
• an insulating film provided between the accumulation electrode and the semiconductor layer,
• wherein either i) the semiconductor layer has a potential energy in a conduction band lower than a potential energy of a conduction band of the photoelectric conversion layer and has a Fermi level lower than a Fermi level of the photoelectric conversion layer, or ii) the semiconductor layer has a potential energy in a valence band higher than a potential energy in a valence band of the photoelectric conversion layer and has a Fermi level lower than a Fermi level of the photoelectric conversion layer, and
• wherein a potential difference between a first region of the photoelectric conversion layer and the semiconductor layer is larger than a potential difference between a second region of the photoelectric conversion layer and the semiconductor layer, the first region of the photoelectric conversion layer being disposed between the second region of the photoelectric conversion layer and semiconductor layer.

A solid-state imaging device comprising:

• a plurality of solid-state imaging elements, the solid-state imaging elements each including:
• a photoelectric conversion layer;
• a first electrode and a second electrode opposed to each other with the photoelectric conversion layer interposed therebetween;
• a semiconductor layer provided between the first electrode and the photoelectric conversion layer;
• an accumulation electrode opposed to the photoelectric conversion layer with the semiconductor layer interposed therebetween;
• an insulating film provided between the accumulation electrode and the semiconductor layer;
• and
• a barrier layer provided between the semiconductor layer and the photoelectric conversion layer,
• wherein either i) electron affinity of the barrier layer is smaller than electron affinity of the photoelectric conversion layer and electron affinity of the semiconductor layer, or ii) ionization potential of the barrier layer is larger than ionization potential of the photoelectric conversion layer and ionization potential of the semiconductor layer.

A solid-state imaging device comprising:

• a plurality of solid-state imaging elements, the solid-state imaging elements each including:
• a photoelectric conversion layer;
• a first electrode and a second electrode opposed to each other with the photoelectric conversion layer interposed therebetween;
• a semiconductor layer provided between the first electrode and the photoelectric conversion layer;
• an accumulation electrode opposed to the photoelectric conversion layer with the semiconductor layer interposed therebetween;
• and
• an insulating film provided between the accumulation electrode and the semiconductor layer,
• wherein either i) the semiconductor layer has a potential energy in a conduction band lower than a potential energy of a conduction band of the photoelectric conversion layer and has a Fermi level lower than a Fermi level of the photoelectric conversion layer, or ii) the semiconductor layer has a potential energy in a valence band higher than a potential energy in a valence band of the photoelectric conversion layer and has a Fermi level lower than a Fermi level of the photoelectric conversion layer, and
• wherein a potential difference between a first region of the photoelectric conversion layer and the semiconductor layer is larger than a potential difference between a second region of the photoelectric conversion layer and the semiconductor layer, the first region of the photoelectric conversion layer being disposed between the second region of the photoelectric conversion layer and semiconductor layer.