Magnetic tunnel junction device with residue-protection sidewall spacer and the method for forming a magnetic tunnel junction device with residue-protection sidewall spacer

A method for fabricating a semiconductor structure, comprising:

• forming a metal line;
• forming a magnetic tunneling junction (MTJ) layer over the metal line, wherein the MTJ layer comprises a first material;
• forming a top electrode over the MTJ layer;
• forming a first dielectric layer, comprising a first portion over at least a portion of a sidewall of the top electrode and a second portion above at least a portion of the MTJ layer;
• partially removing the MTJ layer to form an MTJ after forming the first dielectric layer, thereby generating residue over an outer sidewall of the first dielectric layer, wherein the residue comprises the first material, and at least a portion of a remaining portion of the MTJ layer is in direct contact with the MTJ;
• and
• forming a second dielectric layer over the first dielectric layer to encapsulate the residue.

A method for fabricating a semiconductor structure, comprising:

• forming a metal line;
• forming a magnetic tunneling junction (MTJ) layer over the metal line, wherein the MTJ layer comprises a first material;
• forming a top electrode layer over the MTJ layer;
• patterning the top electrode layer with a first mask, thereby forming a top electrode and exposing a top surface of the MTJ layer;
• forming a first dielectric layer over a sidewall of the top electrode;
• and
• partially removing the MTJ layer to form an MTJ after forming the first dielectric layer, thereby generating residue over an outer sidewall of the first dielectric layer, wherein the residue comprises the first material;
• forming a second dielectric layer over the first dielectric layer to encapsulate the residue;
• and
• forming an insulation layer surrounding the second dielectric layer.