Ferroelectric memory device and method of forming the same

A method of forming a ferroelectric memory device, comprising:

• forming a multi-layer stack over a substrate, the multi-layer stack comprising a plurality of dielectric layers interleaved between a plurality of conductive layers;
• patterning the multi-layer stack to form a trench extending through the multi-layer stack;
• forming a plurality of self-assembled monolayers on sidewalls of the plurality of dielectric layers exposed by the trench;
• forming a plurality of ferroelectric segments on sidewalls of the plurality of conductive layers and vertically outside of the plurality of self-assembled monolayers;
• forming a channel layer directly on upper surfaces, lower surfaces, or sidewalls of the plurality of ferroelectric segments and the sidewalls of the plurality of dielectric layers;
• and
• forming a conductive pillar along sidewalls of the channel layer.

A method of forming a ferroelectric memory device, comprising:

• forming a multi-layer stack over a substrate, the multi-layer stack comprising a plurality of dielectric layers interleaved between a plurality of conductive layers, wherein sidewalls of the plurality of dielectric layers and the plurality of conductive layers define a trench penetrating therethrough;
• forming a plurality of ferroelectric portions on the sidewalls of the plurality of conductive layers;
• forming a channel layer on the plurality of ferroelectric portions and the sidewalls of the plurality of dielectric layers, wherein the channel layer is formed to have a sidewall that contacts the sidewalls of the plurality of dielectric layers and an adjoining upper surface that contacts a lower surface of the plurality of ferroelectric portions, the lower surface of the plurality of ferroelectric portions facing the substrate;
• and
• forming a conductive pillar along sidewalls of the channel layer, wherein the conductive pillar is formed to have a wavy sidewall profile.